The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
May. 26, 2010
Seung-han Yoo, Seongnam-si, KR;
Hoon Chang, Suwon-si, KR;
Seung-han Yoo, Seongnam-si, KR;
Hoon Chang, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
An electrically erasable programmable read-only memory (EEPROM) includes an access transistor having a floating gate and source/drain regions formed at opposite sides of the floating gate in a first well, a first well tap formed in the first well, a control gate located on a second region, first impurity regions formed at both sides of the control gate in the second region, and a second well tap formed in a third region. In order to erase information stored in a memory cell, a predetermined erasing voltage is applied to the source/drain regions of the access transistor and the first well tap, a ground voltage is applied to the first impurity regions in the second region, and a voltage, which is greater than 0V and less than a junction breakdown voltage between the active area and the first well, is applied to the second well tap.