The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Feb. 15, 2011
Chang Won Yang, Incheon, KR;
Jong Hyun Wang, Cheongju-si, KR;
SE Chun Park, Seoul, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
Multi-level cell programming methods are provided. A method includes providing a page buffer including first and second registers connected to first and second memory cell blocks, respectively. A least significant bit (LSB) program of each memory cell is completed. Most significant bit (MSB) data is set in a first node of the first register. An MSB program is performed. When the MSB program is performed at a first verify voltage, first data at a first voltage level is set in the first node. When the MSB program is performed at a second verify voltage, second data at a second voltage level, opposite to the first voltage level, is set in the first node. When the MSB program is performed at a third verify voltage, the first data is set in the first node. The MSB program is repeated according to the first node data.