The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8189374 B1

PDF
Full Text
Expired
Date of Patent:
May. 29, 2012

Filed:

Jun. 29, 2010
Applicant:

Shoaib Zaidi, Mechanicsville, VA (US);

Inventor:

Shoaib Zaidi, Mechanicsville, VA (US);

Assignee:

Qimonda AG, Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory cell includes a first electrode having a first region and a second region, a second electrode and a phase change material. The phase change material is interposed between the first electrode and the second electrode with the first region of the first electrode arranged closer to the phase change material than the second region. The first region of the first electrode includes an inner portion laterally surrounded by an outer portion. The outer portion has a greater resistivity than the inner portion. The second region of the first electrode has the same resistivity as the inner portion of the first region.


Find Patent Forward Citations

Zaidi, Shoaib. (2012). Memory device including an electrode having an outer portion with greater resistivity (U.S. Patent No. 8189374). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8189374

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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