The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Sep. 14, 2009
Masayuki Yamadaya, Matsumoto, JP;
Masayuki Yamadaya, Matsumoto, JP;
Fuji Electric Co., Ltd., , JP;
Abstract
A CMOS IC according to the invention includes a discharging circuit for preventing electrostatic breakdown from occurring. The discharging circuit includes a discharging NMOSFET Qe, which couples a gate terminal node Vgp continuous to the gate of an outputting PDMOS transistor Qand the gate of a discharging NMOSFET Qe via a capacitor Ce, and connects the drain of the discharging NMOSFET Qe to a gate terminal node Vgp continuous to the gate terminal of the outputting PDMOS transistor Q. The discharging circuitalso includes a pull-down resistor disposed between the gate of the discharging NMOSFET Qe and the ground for preventing the discharging NMOSFET Qe from operating in a steady state condition. The CMOS IC according to the invention makes the discharging NMOSFET Qe trigger to operate by the potential change at the node corresponding to the potential change of the power supply line, when a surge caused by static electricity and such is applied to the power supply line.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile