The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Aug. 08, 2008
Kap-soo Yoon, Seoul, KR;
Sung-hoon Yang, Seoul, KR;
Sung-ryul Kim, Cheonan-si, KR;
Hwa-yeul OH, Seoul, KR;
Jae-ho Choi, Seoul, KR;
Yong-mo Choi, Osan-si, KR;
Kap-Soo Yoon, Seoul, KR;
Sung-Hoon Yang, Seoul, KR;
Sung-Ryul Kim, Cheonan-si, KR;
Hwa-Yeul Oh, Seoul, KR;
Jae-Ho Choi, Seoul, KR;
Yong-Mo Choi, Osan-si, KR;
Abstract
A thin-film transistor (TFT) includes a gate electrode, a semiconductor pattern, a source electrode, and a drain electrode. The semiconductor pattern includes an active layer being overlapped with the gate electrode and a low band gap portion having a lower energy band gap than the active layer. The source and drain electrodes are spaced apart from each other to be overlapped with the semiconductor pattern. Therefore, the semiconductor pattern includes a low band gap portion having a lower energy band gap than the active layer, so that electron mobility may be increased in a channel formed along the low band gap portion so that electric characteristics of the TFT may be enhanced.