Light-receiving element and light-receiving element array

Abstract

Provided are a light-receiving element which has sensitivity in the near-infrared region and in which a good crystal quality is easily obtained, a one-dimensional or two-dimensional array of the light-receiving elements is easily formed with a high accuracy, and a dark current can be reduced; a light-receiving element array; and methods for producing the same. A light-receiving element includes a group III-V compound semiconductor stacked structure including an absorption layerhaving a pn-junctiontherein, wherein the absorption layer has a multiquantum well structure composed of group III-V compound semiconductors, the pn-junctionis formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity element in the absorption layer is 5×10cmor less. A diffusion concentration distribution control layerhas an n-type impurity concentration of 2×10/cmor less before the diffusion, the diffusion concentration distribution control layer having a portion adjacent to the absorption layer, the portion having a low impurity concentration.