The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Mar. 22, 2010
Wataru Saito, Kanagawa-ken, JP;
Syotaro Ono, Kanagawa-ken, JP;
Munehisa Yabuzaki, Kanagawa-ken, JP;
Nana Hatano, Kanagawa-ken, JP;
Miho Watanabe, Tokyo, JP;
Wataru Saito, Kanagawa-ken, JP;
Syotaro Ono, Kanagawa-ken, JP;
Munehisa Yabuzaki, Kanagawa-ken, JP;
Nana Hatano, Kanagawa-ken, JP;
Miho Watanabe, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A power semiconductor device has semiconductor layers, including: first layer of first type; second and third layers respectively of first and second types alternately on the first layer; fourth layers of second type on the third layers; fifth layers of first type on the fourth layer; sixth and seventh layers respectively of second and first types alternately on the second and third layers; a first electrode connected to the first layer; an insulation film on fourth, sixth, and seventh layers; a second electrode on fourth, sixth, and seventh layers via the insulation film; and a third electrode joined to fourth and fifth layers, wherein the sixth layers are connected to the fourth layers and one of the third layers between two fourth layers, and an impurity concentration of the third layers below the sixth layers is higher than that of the third layers under the fourth layers.