The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Aug. 29, 2008
Applicants:
Tatsuya Iwasaki, Machida, JP;
Naho Itagaki, Yokohama, JP;
Inventors:
Tatsuya Iwasaki, Machida, JP;
Naho Itagaki, Yokohama, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A field effect transistor is provided including a gate electrode (for example,), a source electrode (), a drain electrode () and a channel layer () to control current flowing between the source electrode () and the drain electrode () by applying a voltage to the gate electrode (). The channel layer () is constituted of an amorphous oxide containing In and Si and having a compositional ratio expressed by Si/(In+Si) of not less than 0.05 and not more than 0.40.