The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Sep. 30, 2009
Pierre Jean Ribeyron, Saint Ismier, FR;
Pierre Jean Ribeyron, Saint Ismier, FR;
Commissariat a L'Energie Atomique, Paris, FR;
Abstract
The invention concerns a photovoltaic cell comprising a heterojunction between a crystalline semiconductor substrate () of first conductivity type and a first amorphous layer () in the same semiconductor material and of a second conductivity type opposite the first type and having a dopant concentration of between 1.10and 1.10atoms/cm. The photovoltaic cell further comprises a second amorphous layer () of same conductivity type as the first layer and having a dopant concentration of between 1.10and 1.10atoms/cm, said second layer being deposited directly on a first face of the substrate and being coated with said first layer. Finally, on a second face of the substrate opposite the first face, the cell comprises a third amorphous layer (), in the same material as the substrate and of same conductivity type with a dopant concentration of between 1.10and 1.10atoms/cm.