The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Jul. 27, 2007
Scott Warrick, Austin, TX (US);
Massud Abubaker Aminpur, Crolles, FR;
Scott Warrick, Austin, TX (US);
Massud Abubaker Aminpur, Crolles, FR;
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of forming openings to a layer of a semiconductor device comprises forming a dielectric layer over the layer of the semiconductor device, forming a main mask over the dielectric layer, the main mask comprising a plurality of main mask openings arranged in a regular pattern extending over the dielectric layer, using a selector mask to select some of the plurality of main mask openings and removing portions of the dielectric layer through the selected some of the plurality of main mask openings to provide openings extending through the dielectric layer to the layer.