The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Aug. 31, 2009
Yuta Endo, Kanagawa, JP;
Ryota Imahayashi, Kanagawa, JP;
Ryosuke Murata, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
An object of the present invention is to improve use efficiency of a semiconductor substrate without lowering efficiency of a fabrication process. Another object of the present invention is to achieve cost reduction by effective use of a semiconductor substrate whose thickness is reduced due to repeated use in a process of manufacturing an SOI substrate. In a process of manufacturing an SOI substrate, a semiconductor substrate is used as a bond substrate a predetermined number of times, or as long as it meets predetermined conditions. In a case where a first single crystal semiconductor substrate cannot be used as a bond substrate, it is bonded to a second single crystal semiconductor substrate. Then, a stacked-layer substrate formed from the first single crystal semiconductor substrate and the second single crystal semiconductor substrate bonded to each other is used as a bond substrate in a process of manufacturing an SOI substrate.