The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Mar. 25, 2010
Shiying Zheng, Webster, NY (US);
Deepak Shukla, Webster, NY (US);
Diane C. Freeman, Pittsford, NY (US);
Shiying Zheng, Webster, NY (US);
Deepak Shukla, Webster, NY (US);
Diane C. Freeman, Pittsford, NY (US);
Eastman Kodak Company, Rochester, NY (US);
Abstract
A process for fabricating a thin film semiconductor device includes the following steps, but not necessarily in the noted order. Firstly, a thin film of organic semiconductor material is deposited onto a substrate. This thin film of organic semiconductor material comprises organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds of claimsuch that the film exhibits a field effect electron mobility that is greater than 0.005 cm/Vs. Then, the process includes forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by and electrically connected with, the n-channel semiconductor film. A gate electrode is then formed, spaced apart from the semiconductor material. One or more of the thin film semiconductor devices (or transistors) can be incorporated into an electronic device.