The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Aug. 07, 2009
Kouhei Hashimoto, Ebina, JP;
Masatsugu Itahashi, Yokohama, JP;
Kouhei Hashimoto, Ebina, JP;
Masatsugu Itahashi, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device that includes a semiconductor substrate, the method comprises: a first irradiation step of irradiating a first irradiated region with a focused ion beam so as to selectively remove a first portion corresponding to the first irradiated region of the wiring pattern, the first irradiated region being positioned on an inner side of a short defect portion of the wiring pattern in a direction along a plane parallel to the principal surface; and a second irradiation step of, after the first irradiation step, irradiating a second irradiated region with a focused ion beam so as to remove a second portion corresponding to the second irradiated region of the wiring pattern, the second irradiated region including a region that is positioned on an outer side of the short defect portion in the direction along the plane parallel to the principal surface.