The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Nov. 14, 2007
Yusuke Mori, Suita, JP;
Takatomo Sasaki, Suita, JP;
Fumio Kawamura, Suita, JP;
Masashi Yoshimura, Suita, JP;
Minoru Kawahara, Suita, JP;
Yasuo Kitaoka, Suita, JP;
Masanori Morishita, Suita, JP;
Yusuke Mori, Suita, JP;
Takatomo Sasaki, Suita, JP;
Fumio Kawamura, Suita, JP;
Masashi Yoshimura, Suita, JP;
Minoru Kawahara, Suita, JP;
Yasuo Kitaoka, Suita, JP;
Masanori Morishita, Suita, JP;
Osaka University, Osaka, JP;
Abstract
A method for producing a GaN crystal capable of achieving at least one of the prevention of nucleation and the growth of a high-quality non-polar surface is provided. The production method of the present invention is a method for producing a GaN crystal in a melt containing at least an alkali metal and gallium, including an adjustment step of adjusting the carbon content of the melt, and a reaction step of causing the gallium and nitrogen to react with each other. According to the production method of the present invention, nucleation can be prevented, and as shown in FIG., a non-polar surface can be grown.