The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 29, 2012

Filed:

Oct. 05, 2005
Applicant:

Jeff Alistair Hill, Munich, DE;

Inventor:

Jeff Alistair Hill, Munich, DE;

Assignee:

PVA TePla AG, Wettenberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to a process for etching a substrate () in an etching chamber () with a plasma ignited outside of the etching chamber (). The process is characterized in that during the etching process at least temporarily at least one gas jet () is directed from the side to the radical stream () which is directed towards the substrate (). Furthermore the invention relates to an etching chamber for etching of a substrate () with a substrate holder () and a plasma source () remote to the substrate holder (), which is characterized in that between the substrate holder () and the plasma source () at least one nozzle () for lateral introduction of a gas jet () into the etching chamber () is provided. With this invention the distribution of the active species on the surface of a substrate can be easily influenced.


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