The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Apr. 01, 2009
Dong-soo Woo, Seoul, KR;
Jong-soo Kim, Incheon, KR;
Dong-Soo Woo, Seoul, KR;
Jong-Soo Kim, Incheon, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A DRAM device having a plurality of memory blocks, including edge-located memory blocks and adjacent central memory blocks. An edge-located memory block shares a sense amplifier with an adjacent central memory block. The memory cells in the edge-located memory block include data storage capacitors having a greater capacitance value than data storage capacitors in the memory cells in the adjacent central memory block. The data storage capacitors in edge-located memory cells may have greater surface area than data storage capacitors in the central memory cells. The data storage capacitors in edge-located memory cells may be formed by connecting in parallel two data storage capacitors of the shape and size of data storage capacitors used in each of the memory cells of the adjacent central memory block.