The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2012

Filed:

Jun. 08, 2006
Applicants:

Per Bröms, Linköping, SE;

Christer Karlsson, Linköping, SE;

Geirr I. Leistad, Sandvika, NO;

Per Hamberg, Kisa, SE;

Staffan Björklid, Linköping, SE;

Johan Carlsson, Linköping, SE;

Göran Gustafsson, Linköping, SE;

Hans Gude Gudesen, Brussels, BE;

Inventors:

Per Bröms, Linköping, SE;

Christer Karlsson, Linköping, SE;

Geirr I. Leistad, Sandvika, NO;

Per Hamberg, Kisa, SE;

Staffan Björklid, Linköping, SE;

Johan Carlsson, Linköping, SE;

Göran Gustafsson, Linköping, SE;

Hans Gude Gudesen, Brussels, BE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a non-volatile electric memory system a memory unit and a read/write unit are provided as physically separate units. The memory unit is based on a memory material that can be set to at least two distinct physical states by applying an electric field across the memory material. Electrodes and/or contacts are either provided in the memory unit or in the read/write unit and contacts are at least always provided in the read/write unit. Electrodes and contacts are provided in a geometrical arrangement, which defines geometrically one or more memory cells in the memory layer. Establishing a physical contact between the memory unit and the read/write unit closes an electrical circuit over the addressed memory cell such that read, write or erase operations can be effected. The memory material of the memory unit can be polarized into two discernible polarization states.


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