The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
May. 18, 2010
Soon-cheol Kweon, Seoul, KR;
Hyung-jae Shin, Seongnam-si, KR;
Byung-hee Jeon, Seongnam-si, KR;
Seok-kwan Hong, Seoul, KR;
Che-heung Kim, Yongin-si, KR;
Sang-hun Lee, Seoul, KR;
Soon-cheol Kweon, Seoul, KR;
Hyung-jae Shin, Seongnam-si, KR;
Byung-hee Jeon, Seongnam-si, KR;
Seok-kwan Hong, Seoul, KR;
Che-heung Kim, Yongin-si, KR;
Sang-hun Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A micro thin-film structure, a micro electro-mechanical system (MEMS) switch, and methods of fabricating them. The micro thin-film structure includes at least two thin-films having different properties and laminated in sequence to form an upper layer and a lower layer, wherein an interface between the upper and lower layers is formed to be oriented to at least two directions. The micro thin film structure, and method of forming, may be applied to a movable electrode of an MEMS switch. The thin-film structure may be formed by forming through-holes in the lower layer, and depositing the upper layer in the form of being engaged in the through-holes. Alternatively, the thin-film structure may be made by forming prominence and depression parts on the top side of the lower layer and then depositing the upper layer on the top side of the lower layer having the prominence and depression parts.