The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2012

Filed:

Jun. 29, 2009
Applicants:

Shinji Hiramitsu, Kashiwa, JP;

Hiroyuki Ohta, Tsuchiura, JP;

Koji Sasaki, Mito, JP;

Masato Nakamura, Fujisawa, JP;

Osamu Ikeda, Yokohama, JP;

Satoshi Matsuyoshi, Takahagi, JP;

Inventors:

Shinji Hiramitsu, Kashiwa, JP;

Hiroyuki Ohta, Tsuchiura, JP;

Koji Sasaki, Mito, JP;

Masato Nakamura, Fujisawa, JP;

Osamu Ikeda, Yokohama, JP;

Satoshi Matsuyoshi, Takahagi, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device which includes a semiconductor chip; an electrically conductive base electrode bonded to the lower surface of the chip by a first bonding member; an electrically conductive lead electrode bonded to the upper surface of the chip by a second bonding member; and a first stress relief member for reducing stress developed in the first bonding member due to the difference in thermal expansion between the chip and the base electrode. Both the base electrode and the first stress relief member are in direct contact with the lower surface of the first bonding member. A protrusion is formed upstanding from the base electrode in direct contact with the first bonding member, and the first stress relief member surrounds a circumferential portion of the protrusion.


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