The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Jan. 09, 2007
Tadahiro Ohmi, Miyagi, JP;
Shigetoshi Sugawa, Miyagi, JP;
Akinobu Teramoto, Miyagi, JP;
Hiroshi Akahori, Kanagawa, JP;
Keiichi Nii, Miyagi, JP;
Tadahiro Ohmi, Miyagi, JP;
Shigetoshi Sugawa, Miyagi, JP;
Akinobu Teramoto, Miyagi, JP;
Hiroshi Akahori, Kanagawa, JP;
Keiichi Nii, Miyagi, JP;
Foundation for Advancement of International Science, Tsukuba, JP;
Abstract
In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated HO or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.