The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Oct. 14, 2009
Kouji Nakajima, Shiga, JP;
Kouji Nakajima, Shiga, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
Flexibility for the design of the pattern layout of the gate lead-out electrode and the source electrode is enhanced without increasing the chip thickness of the semiconductor device. A semiconductor device includes a cell region where plural transistor cells are arranged and a gate finger region different from a region where the cell region is formed. In the cell region, a gate electrode formed of a polysilicon (first conductive material) is formed. A polysilicon layer formed indivisibly with the gate electrode is formed in the gate finger region. An adhesion metal layer and a wiring metal layer are formed above the polysilicon layer by a lift-off method. The gate lead-out electrode is formed of a laminate structure including the polysilicon layer, the adhesion metal layer, and the wiring metal layer. A single layer of interlayer insulation film covering them is formed, on which a source electrode is formed.