The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Jan. 06, 2010
Hoon Jeong, Hwaseong-si, KR;
Yong-chul OH, Suwon-si, KR;
Sung-in Hong, Seoul, KR;
Sung-hwan Kim, Suwon-si, KR;
Yong-lack Choi, Seoul, KR;
Ho-ju Song, Seoul, KR;
Hoon Jeong, Hwaseong-si, KR;
Yong-Chul Oh, Suwon-si, KR;
Sung-In Hong, Seoul, KR;
Sung-Hwan Kim, Suwon-si, KR;
Yong-Lack Choi, Seoul, KR;
Ho-Ju Song, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A memory device includes an insulation layer, an active pattern, a gate insulation layer and a gate electrode. The insulation layer is formed on a substrate. The active pattern is formed on the insulation layer, and includes two protrusions and a recess between the protrusions. The active pattern includes a first impurity region and a second impurity region at upper portions of the protrusions distal from the substrate, respectively, and a base region at the other portions serving as a floating body for storing data. The gate insulation layer is formed on a surface of the active pattern. The gate electrode is formed on the gate insulation layer, and surrounds a lower portion of the active pattern and partially fills the recess.