The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Aug. 27, 2009
Yoshinori Kumura, Albany, CA (US);
Yoshinori Kumura, Albany, CA (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to an aspect of the present invention, there is provided a nonvolatile memory including: a cell transistor including: a gate electrode and first and second diffusion layers; a second insulating film covering the cell transistor; first and second plugs penetrating the second insulating film to reach the first and second diffusion layers, respectively; a ferroelectric capacitor having a ferroelectric film and first and second electrodes, the first electrode contacting with the first plug; a first conductive spacer contacting with the second plug and including the same material as the first electrode; a third insulating film covering side faces of the first electrode, the ferroelectric film and the first conductive spacer; and a first wiring that is continuously formed with the second electrode and connected to the first conductive spacer and that includes the same material as the second electrode.