The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Nov. 25, 2009
Ryuta Arai, Hyogo-ken, JP;
Hidetoshi Asahara, Hyogo-ken, JP;
Kouji Murakami, Hyogo-ken, JP;
Keiko Kawamura, Kanagawa-ken, JP;
Ryuta Arai, Hyogo-ken, JP;
Hidetoshi Asahara, Hyogo-ken, JP;
Kouji Murakami, Hyogo-ken, JP;
Keiko Kawamura, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device comprises an insulated gate field effect transistor and a protection diode. The insulated gate field effect transistor has a gate electrode formed on a gate insulating film, a source and a drain. The source and the drain are formed in a first area of a semiconductor substrate. A first silicon oxide film is formed on a second area of the semiconductor substrate adjacent to the first area. The first silicon oxide film is thicker than the gate insulating film and contains larger amount of impurities than the gate insulating film. A poly-silicon layer is formed on the first silicon oxide film. The protection diode has a plurality of PN-junctions formed in the poly-silicon layer. The protection diode is connected between the gate electrode and the source so as to prevent breakdown of the gate insulating film.