The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Jun. 30, 2009
Applicants:
Sungsoo Yi, Sunnyvale, CA (US);
Nathan F. Gardner, Sunnyvale, CA (US);
Qi Laura YE, Palo Alto, CA (US);
Inventors:
Sungsoo Yi, Sunnyvale, CA (US);
Nathan F. Gardner, Sunnyvale, CA (US);
Qi Laura Ye, Palo Alto, CA (US);
Assignees:
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Philips Lumileds Lighting Company, LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract
A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.