The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Jan. 05, 2011
Giovanni Abagnale, Catania, IT;
Dario Salinas, Catania, IT;
Sebastiano Ravesi, Sant'Agata Li Battiati, IT;
Giovanni Abagnale, Catania, IT;
Dario Salinas, Catania, IT;
Sebastiano Ravesi, Sant'Agata Li Battiati, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
An embodiment of a process for forming an interface between a silicon carbide (SiC) layer and a silicon oxide (SiO) layer of a structure designed to conduct current is disclosed. A first epitaxial layer having a first doping level is homo-epitaxially grown on a substrate. The homo-epitaxial growth is preceded by growing, on the first epitaxial layer, a second epitaxial layer having a second doping level higher than the first doping level. Finally, the second epitaxial layer is oxidized so as to be totally removed. Thereby, a silicon oxide layer of high quality is formed, and the interface between the second epitaxial layer and silicon oxide has a low trap density.