The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Mar. 01, 2007
Applicants:
Nobuhiko Kobayashi, Sunnyvale, CA (US);
Shih Yuan Wang, Palo Alto, CA (US);
Inventors:
Nobuhiko Kobayashi, Sunnyvale, CA (US);
Shih Yuan Wang, Palo Alto, CA (US);
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A hetero-crystalline semiconductor device and a method of making the same include a non-single crystalline semiconductor layer and a nanostructure layer that comprises a single crystalline semiconductor nanostructure integral to a crystallite of the non-single crystalline semiconductor layer.
Quick Actions:
Kobayashi, Nobuhiko. (2012). Hetero-crystalline semiconductor device and method of making same (U.S. Patent No. 8183566). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8183566
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile