The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2012

Filed:

Jun. 06, 2011
Applicant:

Kyung Jun Kim, Gwangju, KR;

Inventor:

Kyung Jun Kim, Gwangju, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor light emitting device including a first semiconductor layer including a first type dopant; a second semiconductor layer including the first type dopant on the first semiconductor layer; an active layer on the second semiconductor layer, the active layer including a multi-quantum well structure having a plurality of quantum barrier layers and a plurality of quantum well layers; a third semiconductor layer including a second type dopant on the active layer; and a fourth semiconductor layer including the second type dopant on the third semiconductor layer. The first semiconductor layer has a composition equation of Al(GaIn)N (X=1, 0<Y<1) and the fourth semiconductor layer has a composition equation of Al(GaIn)N (X=1, 0<Y<1).


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