The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2012

Filed:

Dec. 02, 2010
Applicants:

Phillipe J. Tabada, Roseville, CA (US);

Melody Tabada, Legal Representative, Roseville, CA (US);

Satinderpall S. Pannu, Pleasanton, CA (US);

Inventors:

Phillipe J. Tabada, Roseville, CA (US);

Melody Tabada, legal representative, Roseville, CA (US);

Satinderpall S. Pannu, Pleasanton, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a thin film device having conductive front and backside electrodes or contacts. Top-side cavities are first formed on a first dielectric layer, followed by the deposition of a metal layer on the first dielectric layer to fill the cavities. Defined metal structures are etched from the metal layer to include the cavity-filled metal, followed by depositing a second dielectric layer over the metal structures. Additional levels of defined metal structures may be formed in a similar manner with vias connecting metal structures between levels. After a final dielectric layer is deposited, a top surface of a metal structure of an uppermost metal layer is exposed through the final dielectric layer to form a front-side electrode, and a bottom surface of a cavity-filled portion of a metal structure of a lowermost metal layer is also exposed through the first dielectric layer to form a back-side electrode.


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