The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Mar. 25, 2010
Kazutoshi Izumi, Kawasaki, JP;
Kouichi Koseko, Kawasaki, JP;
Kazutoshi Izumi, Kawasaki, JP;
Kouichi Koseko, Kawasaki, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
Disclosed is a method of manufacturing a semiconductor device, which comprises the steps of: forming a hydrogen diffusion preventing insulating film covering capacitors; forming a capacitor protecting insulating film on the hydrogen diffusion preventing insulating film; and forming a first insulating film on the capacitor protecting insulating film by a plasma CVD method where, while a high-frequency bias electric power is applied toward the semiconductor substrate, a plasma-generating high frequency electric power is applied to first deposition gas containing oxygen and silicon compound gas. In the method, a condition by which moisture content in the capacitor protecting insulating film becomes less than that in the first insulating film is adopted as a film deposition condition for the capacitor protecting insulating film.