The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
May. 17, 2011
Robert Hannebauer, Vancouver, CA;
Robert Hannebauer, Vancouver, CA;
Hanvision Co., Ltd., , KR;
Lumiense Photonics Inc., , KR;
Abstract
A method of manufacturing a semiconductor device is disclosed. The method comprises: applying a sensing layer with variation in a secondary attribute according to heat, on a handle wafer; patterning the sensing layer, thus forming a cavity; forming a sensing part pattern having a beam structure in the cavity; forming a light-absorbing layer for converting energy of incident photons into heat, along the sensing part pattern; turning the entire structure over, removing the handle wafer, and thus exposing a rear portion of the sensing part pattern; and forming an additional light-absorbing layer on a rear portion of the light-absorbing layer formed on the sensing part pattern, thereby forming a sensing structure part having a beam structure. The method may further comprises: after the forming of the light-absorbing layer for converting the energy of the incident photons into the heat, forming on the light-absorbing layer a filling layer to fill up the cavity, and after the forming of the additional light-absorbing layer, selectively removing the filling layer and exposing the sensing structure part in a manner to float it over the cavity.