The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Jul. 21, 2011
Chang Youn Kim, Ansan-si, KR;
Shiro Sakai, Tokushima, JP;
Hwa Mok Kim, Ansan-si, KR;
Joon Hee Lee, Ansan-si, KR;
Soo Young Moon, Ansan-si, KR;
Kyoung Wan Kim, Ansan-si, KR;
Chang Youn Kim, Ansan-si, KR;
Shiro Sakai, Tokushima, JP;
Hwa Mok Kim, Ansan-si, KR;
Joon Hee Lee, Ansan-si, KR;
Soo Young Moon, Ansan-si, KR;
Kyoung Wan Kim, Ansan-si, KR;
Seoul Opto Device Co., Ltd., Ansan-si, KR;
Abstract
The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.