The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Mar. 10, 2010
Jeong-wook Lee, Seongnam-si, KR;
Heon-su Jeon, Gunpo-si, KR;
Suk-ho Yoon, Seoul, KR;
Joo-sung Kim, Yongin-si, KR;
Jeong-wook Lee, Seongnam-si, KR;
Heon-su Jeon, Gunpo-si, KR;
Suk-ho Yoon, Seoul, KR;
Joo-sung Kim, Yongin-si, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Seoul National University Industry Foundation, Seoul, KR;
Abstract
A nitride-based semiconductor light emitting device having an improved structure in which light extraction efficiency is improved and a method of manufacturing the same are provided. The nitride-based semiconductor light emitting device comprises an n-clad layer, an active layer, and a p-clad layer, which are sequentially stacked on a substrate, wherein the n-clad layer comprises a first clad layer, a second clad layer, and a light extraction layer interposed between the first clad layer and the second clad layer and composed of an array of a plurality of nano-posts, the light extraction layer diffracting or/and scattering light generated in the active layer.