The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Jul. 01, 2005
Franz Laermer, Weil der Stadt, DE;
Silvia Kronmueller, Schwaikheim, DE;
Tino Fuchs, Tuebingen, DE;
Christina Leinenbach, Ensdorf, DE;
Franz Laermer, Weil der Stadt, DE;
Silvia Kronmueller, Schwaikheim, DE;
Tino Fuchs, Tuebingen, DE;
Christina Leinenbach, Ensdorf, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A method for etching a layer that is to be removed on a substrate, in which a SiGelayer is the layer to be removed, this layer being removed, at least in areas, in gas phase etching with the aid of an etching gas, in particular ClF. The etching behavior of the SiGelayer can be controlled via the Ge portion in the SiGelayer. The etching method is particularly well-suited for manufacturing self-supporting structures in a micromechanical sensor and for manufacturing such self-supporting structures in a closed hollow space, because the SiGelayer, as a sacrificial layer or filling layer, is etched highly selectively relative to silicon.