The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 22, 2012

Filed:

May. 03, 2010
Applicants:

Min-ho Yoon, Suwon-si, KR;

Nam-seok Roh, Seongnam-si, KR;

Myung-hwan Kim, Yongin-si, KR;

Sang-il Kim, Yongin-si, KR;

Woo-jae Lee, Yongin-si, KR;

Jong-seong Kim, Seoul, KR;

Inventors:

Min-Ho Yoon, Suwon-si, KR;

Nam-Seok Roh, Seongnam-si, KR;

Myung-Hwan Kim, Yongin-si, KR;

Sang-Il Kim, Yongin-si, KR;

Woo-Jae Lee, Yongin-si, KR;

Jong-Seong Kim, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B29C 65/48 (2006.01); B32B 37/26 (2006.01); B32B 38/10 (2006.01); B32B 43/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a flexible display device. The method includes forming an adhesive layer on a first carrier substrate; laminating a first flexible substrate on the adhesive layer, so that a first separation layer of the first flexible substrate is disposed on the adhesive layer; forming a thin film transistor array on the first flexible substrate; and separating the first carrier substrate from the flexible substrate by directing a laser beam onto the first separation layer. The first separation layer comprises silicon nitride (SiNx) with amounts of nitride A1 and amounts of silicon B1 satisfying 0.18≦{A1/B1}≦0.90.


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