The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Apr. 06, 2005
Oleg Okhotnikov, Tampere, FI;
Mircea Guina, Tampere, FI;
Anatoly B. Grudinin, Southampton, GB;
Reflekron Ltd., Tampere, FI;
Abstract
A design of a semiconductor saturable absorber that offers a convenient and reliable way to control/decrease the recovery time of the absorption. The absorption recovery time is controlled during the epitaxial growth by using lattice-mismatched layer(s) to induce dislocations, and implicitly non-radiative recombination centers within the nonlinear absorbing region. These lattice reformation layer(s) are interposed between the distributed Bragg reflector and the nonlinear absorption region, containing quantum-wells, quantum-dots or bulk semiconductor material. The thickness and composition of the lattice reformation layer(s) is an instrumental to control the amount of non-radiative recombination centers used to trap the optically excited carriers generated in the absorption region.