The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Dec. 31, 2010
Nick Holonyak, Jr., Urbana, IL (US);
Milton Feng, Champaign, IL (US);
Gabriel Walter, Urbana, IL (US);
Adam James, Urbana, IL (US);
Nick Holonyak, Jr., Urbana, IL (US);
Milton Feng, Champaign, IL (US);
Gabriel Walter, Urbana, IL (US);
Adam James, Urbana, IL (US);
The Board of Trustees Of The University Of Illinois, Urbana, IL (US);
Abstract
A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination.