The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Dec. 16, 2009
Applicants:
Nam-kyun Tak, Bucheon-si, KR;
Ki-whan Song, Yongin-si, KR;
Inventors:
Nam-Kyun Tak, Bucheon-si, KR;
Ki-Whan Song, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/18 (2006.01);
U.S. Cl.
CPC ...
Abstract
Antifuses and program circuits having the same. The antifuses are embodied as a transistor. When a first power supply voltage is applied to a source, a first program voltage for causing impact ionization is applied to a gate and drain, and a second program voltage for causing channel initiated secondary electron/channel initiated secondary hole (CHISEL/CHISHL) is applied to a well, a dielectric material may be ruptured between the gate adjacent to the drain and the well so that an antifuse may be programmed.