The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Dec. 31, 2008
Kyoung Lae Cho, Yongin-si, KR;
Yoon Dong Park, Yongin-si, KR;
Jun Jin Kong, Yongin-si, KR;
Yong June Kim, Seoul, KR;
Kyoung Lae Cho, Yongin-si, KR;
Yoon Dong Park, Yongin-si, KR;
Jun Jin Kong, Yongin-si, KR;
Yong June Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided are memory devices and memory programming methods. A memory device may include: a multi-level cell array that includes a plurality of multi-level cells; a programming unit that programs a first data page in the plurality of multi-level cells and programs a second data page in a multi-level cell from among the plurality of multi-level cells in which the first data page is programmed; an error analysis unit that analyzes read error information corresponding to the first data page based on a read voltage level to determine whether to correct a read error based on the analyzed read error information; and a controller that adjusts the read voltage level of the first data page depending on the determination result. Through this, it is possible to reduce an error occurrence when reading and/or programming a data page.