The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8179710 B1

PDF
Full Text
Expired
Date of Patent:
May. 15, 2012

Filed:

Mar. 23, 2010
Applicant:

Yoshihiro Minami, Yokosuka, JP;

Inventor:

Yoshihiro Minami, Yokosuka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory includes memory cells on a semiconductor layer, in which each of the memory cells includes a source layer and a drain layer in the semiconductor layer; an electrically floating body region provided in the semiconductor layer between the source layer and the drain layer and configured to accumulate or discharge electric charges in order to store logical data; a gate dielectric film provided on the body region and comprising a ferroelectric film with polarization characteristics; and a gate electrode provided on the gate dielectric film above the body region, wherein each memory cell stores a plurality of logical data depending on an amount of electric charges accumulated in the body region and on a polarization state of the ferroelectric film.


Find Patent Forward Citations

Minami, Yoshihiro. (2012). Semiconductor memory device (U.S. Patent No. 8179710). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8179710

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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