The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2012

Filed:

Aug. 17, 2007
Applicants:

Masanori Nagase, Tsukuba, JP;

Ryoichi Akimoto, Tsukuba, JP;

Hiroshi Ishikawa, Tsukuba, JP;

Inventors:

Masanori Nagase, Tsukuba, JP;

Ryoichi Akimoto, Tsukuba, JP;

Hiroshi Ishikawa, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/03 (2006.01); G02F 1/00 (2006.01); G02B 6/10 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

In the production of optical devices or the like utilizing an intersubband transition of a coupled quantum well, a quantum well structure having strong coupling is provided. In addition, a coupled well structure of excellent productivity capable of avoiding thinning of coupling barrier layer for strengthening the coupling is provided. In the semiconductor coupled well structure of the present invention, a coupled quantum well structure disposed on the semiconductor single crystal substrate includes a coupling barrier layerdisposed between two or more quantum well layersand, wherein the coupling barrier layerhas an energy barrier that is smaller than an excitation level (Eand E) and is larger than a ground level (Eand E).


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