The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Nov. 20, 2009
James Chingwei LI, Simi Valley, CA (US);
Marko Sokolich, Los Angeles, CA (US);
Tahir Hussain, Calabasas, CA (US);
David H. Chow, Newbury Park, CA (US);
James Chingwei Li, Simi Valley, CA (US);
Marko Sokolich, Los Angeles, CA (US);
Tahir Hussain, Calabasas, CA (US);
David H. Chow, Newbury Park, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A heterojunction bipolar transistor (HBT) having an emitter, a base, and a collector, the base including a first semiconductor layer coupled to the collector, the first semiconductor layer having a first bandgap between a first conduction band and a first valence band and a second semiconductor layer coupled to the first semiconductor layer and having a second bandgap between a second conduction band and a second valence band, wherein the second valence band is higher than the first valence band and wherein the second semiconductor layer comprises a two dimensional hole gas and a third semiconductor layer coupled to the second semiconductor layer and having a third bandgap between a third conduction band and a third valence band, wherein the third valence band is lower than the second valence band and wherein the third semiconductor layer is coupled to the emitter.