The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2012

Filed:

Feb. 24, 2009
Applicants:

Takayuki Shimamura, Osaka, JP;

Masayuki Ono, Osaka, JP;

Reiko Taniguchi, Osaka, JP;

Eiichi Satoh, Osaka, JP;

Masato Murayama, Osaka, JP;

Masaru Odagiri, Hyogo, JP;

Inventors:

Takayuki Shimamura, Osaka, JP;

Masayuki Ono, Osaka, JP;

Reiko Taniguchi, Osaka, JP;

Eiichi Satoh, Osaka, JP;

Masato Murayama, Osaka, JP;

Masaru Odagiri, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
Abstract

A light emitting device includes a pair of electrodes facing to each other and a phosphor layer which is sandwiched between the pair of electrodes and includes phosphor particles placed therein. The phosphor particles include an n-type nitride semiconductor part and a p-type nitride semiconductor part, the n-type nitride semiconductor part and the p-type nitride semiconductor part are made of respective single crystals having wurtzite-type crystal structures having c axes parallel with each other, and the phosphor particles include an insulation layer provided to overlie one end surface out of their end surfaces perpendicular to the c axes.


Find Patent Forward Citations

Loading…