The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Jun. 19, 2007
Applicants:
Yoshitaka Kinoshita, Tokyo, JP;
Hidenori Kamei, Fukuoka, JP;
Inventors:
Yoshitaka Kinoshita, Tokyo, JP;
Hidenori Kamei, Fukuoka, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor light emitting element includes a substratehaving a defect concentrated regionwhich has a crystal defect density higher than in the other region. On the substrate, a semiconductor layeris formed. On the defect concentrated region, a first electrodeis formed. On the semiconductor layer, a second electrodeis formed.
Kinoshita, Yoshitaka. (2012). Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region (U.S. Patent No. 8178889). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8178889
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile