The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Mar. 24, 2006
Koichiro Niira, Higashiomi, JP;
Tomonari Sakamoto, Higashiomi, JP;
Norihiko Matsushima, Higashiomi, JP;
Koichiro Niira, Higashiomi, JP;
Tomonari Sakamoto, Higashiomi, JP;
Norihiko Matsushima, Higashiomi, JP;
Kyocera Corporation, Kyoto, JP;
Abstract
A photovoltaic conversion element includes a one conductivity-type crystalline Si semiconductor; an opposite conductivity-type semiconductor which is joined to the crystalline Si semiconductor to form a pn junction therebetween; an electrode provided on the opposite conductivity-type semiconductor; and a depletion region formed from the side of the one conductivity-type crystalline Si semiconductor to the side of the opposite conductivity-type semiconductor across the pn junction formed therebetween. The depletion region has a first depletion region located inside the crystalline Si semiconductor and under the electrode, and the first depletion region has an oxygen concentration of 1E18 [atoms/cm] or less.