The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 15, 2012

Filed:

Jun. 09, 2010
Applicants:

Tadashi Horie, Toyama, JP;

Akito Hirano, Toyama, JP;

Tadashi Terasaki, Imizu, JP;

Inventors:

Tadashi Horie, Toyama, JP;

Akito Hirano, Toyama, JP;

Tadashi Terasaki, Imizu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

A manufacturing method for a semiconductor device, that loads a substrate on which a film containing oxygen atoms, chlorine atoms, and metal atoms is formed into a processing chamber so as to be supported by a substrate support part. The substrate is heated by the substrate support part. The inside of the processing chamber is exhausted by a gas exhaust part while supplying nitrogen atoms-containing gas and hydorgen atoms-containing gas into the processing chamber by a gas supply part. A plasma generation part is then used to excite the nitrogen atoms-containing gas and the hydrogen atoms-containing gas supplied into the processing chamber.


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