The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Jul. 13, 2009
Sang-yong Park, Suwon-si, KR;
Jae-kwan Park, Suwon-si, KR;
Dong-hwa Kwak, Suwon-si, KR;
Byung-kwan You, Seoul, KR;
Sang-yong Park, Suwon-si, KR;
Jae-kwan Park, Suwon-si, KR;
Dong-hwa Kwak, Suwon-si, KR;
Byung-kwan You, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method in the fabrication of a semiconductor device simultaneously forms different patterns on the same level of the device. The device has a first area and a second area. A low density mask pattern of at least one relatively wide topographic feature is formed on the second area, a plurality of relatively narrow topographic features is formed on the first area, first spacers are formed on side walls of the narrow topographic features in the first area, the relatively narrow topographic features are removed, and the patterns of the first spacers and the relatively wide topographic feature(s) are simultaneously transcribed in the first and second areas, respectively.