The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Nov. 10, 2005
Shinji Aramaki, Yokohama, JP;
Ryuichi Yoshiyama, Yokohama, JP;
Akira Ohno, Yokohama, JP;
Yoshimasa Sakai, Yokohama, JP;
Shinji Aramaki, Yokohama, JP;
Ryuichi Yoshiyama, Yokohama, JP;
Akira Ohno, Yokohama, JP;
Yoshimasa Sakai, Yokohama, JP;
Mitsubishi Chemical Corporation, Tokyo, JP;
Abstract
A field effect transistor including a gate insulation portion, an organic semiconductor portion, a source electrode and a drain electrode, wherein when a voltage is applied to the gate at 70° C. for 5.0±0.1 hours so that the field strength in the gate insulation portion would be 100±5 MV/m, the change in the threshold voltage is within 5 V. The organic semiconductor portion has a high driving stability, of which the change in characteristics by driving is thereby small.