The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8178369 B1

PDF
Full Text
Expired
Date of Patent:
May. 15, 2012

Filed:

Oct. 08, 2007
Applicants:

Jung Bum Choi, Cheongju-si, KR;

Jong Jin Lee, Cheongju, KR;

Seung-jun Shin, Pyeongchang-gun, KR;

Rae-sik Chung, Andong, KR;

Inventors:

Jung Bum Choi, Cheongju-si, KR;

Jong Jin Lee, Cheongju, KR;

Seung-Jun Shin, Pyeongchang-gun, KR;

Rae-Sik Chung, Andong, KR;

Assignee:

Nanochips, Inc., Heungdeok-gu, Cheongju-si, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a method of fabricating a nanoscale multi-junction quantum dot device wherein it can minimize constraints depending on the number or shape of patterns and a line width, and in particular, overcome shortcomings depending on the proximity effect occurring between patterns while employing the advantages of electron beam lithography to the utmost by forming a new conductive layer between the patterns and utilizing it as a new pattern.


Find Patent Forward Citations

Choi, Jung. (2012). Nanoscale multi-junction quantum dot device and fabrication method thereof (U.S. Patent No. 8178369). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8178369

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