The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2012
Filed:
Jan. 21, 2011
Atsushi Narazaki, Chiyoda-ku, JP;
Yukio Matsushita, Chiyoda-ku, JP;
Masashi Osaka, Chiyoda-ku, JP;
Shunsuke Sakamoto, Fukuoka, JP;
Atsushi Narazaki, Chiyoda-ku, JP;
Yukio Matsushita, Chiyoda-ku, JP;
Masashi Osaka, Chiyoda-ku, JP;
Shunsuke Sakamoto, Fukuoka, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor wafer having IGBT elements and transistors formed on a surface thereof is prepared. Electron beams are emitted all over the surface of the semiconductor wafer. Recombination centers are formed in the IGBT elements and the transistors. ON voltages of the transistors are measured by a measurement device, and lifetimes defined in the IGBT elements and the transistors are recovered by a prescribed annealing treatment. When the lifetimes are recovered, a control device controls an annealing treatment amount in the annealing treatment based on the measured ON voltages of the transistors such that ON voltages of the IGBT elements are each equal to a desired ON voltage. Variations in the ON voltages of a plurality of IGBT elements obtained from the semiconductor wafer are reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile